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| 2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features * High power gain low noise figure at low power operation: |S21| = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 2 Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "WB-". 2SC5700 Absolute Maximum Ratings (Ta = 25 C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Value 15 4 1.5 50 80 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Forward transmission coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT |S21| NF 2 Min 15 100 10 13 Typ 130 0.4 12 16 1.0 Max 0.1 1 200 170 0.7 1.7 Unit V A A nA pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 4 V, RBE = Infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz, S = L = 50 ohm Rev.0, Jun. 2001, page 2 of 10 2SC5700 Collector Power Dissipation Curve Typical Output Characteristics 50 0 A 450 A Pc (mW) 100 80 50 400 A 350 A 300 A I C (mA) 40 30 Collector Power Dissipation 250 A 200 A 150 A 60 40 Collector Current 20 10 100 A IB = 50 A 20 0 50 100 150 Ta (C) 200 0 1 2 3 4 Ambient Temperature Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 50 200 DC Current Transfer Ratio vs. Collector Current VCE = 1 V IC (mA) Collector Current 30 DC Current Transfer Ratio 40 hFE 100 0 VCE = 1 V 20 10 0 0.2 0.4 0.6 0.8 VBE (V) 1 1 2 5 10 20 50 100 Base to Emitter Voltage Collector Current IC (mA) Rev.0, Jun. 2001, page 3 of 10 2SC5700 Collector Output Capacitance vs. Collector to Base Voltage 1.0 fT (GHz) Gain Bandwidth Product vs. Collector Current 20 VCE = 1 V f = 2 GHz Collector Output Capacitance Cob (pF) IE = 0 f = 1 MHz 0.8 16 Gain Bandwidth Product 0.6 12 8 0.4 0.2 4 0 0 0.4 0.8 1.2 1.6 2.0 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) Collector Current IC (mA) S21 Parameter vs. Collector Current 20 | S21 |2 (dB) | S21 |2 (dB) S21 Parameter vs. Collector Current 20 VCE = 1V f = 2 GHz 16 16 12 12 8 VCE = 1 V f = 900 MHz S21 Parameter 8 4 0 1 2 5 10 20 50 100 S21 Parameter 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.0, Jun. 2001, page 4 of 10 2SC5700 Noise Figure vs. Collector Current 5 VCE = 1 V f = 900 MHz NF (dB) Noise Figure 4 3 2 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.0, Jun. 2001, page 5 of 10 2SC5700 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 -5 -4 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 8 / div. 60 -150 -30 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) S12 Parameter vs. Frequency Scale: 0.06 / div. 90 120 60 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -3 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( Ic = 5 mA) ( Ic = 20 mA) Rev.0, Jun. 2001, page 6 of 10 2SC5700 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.855 0.784 0.703 0.616 0.540 0.475 0.428 0.385 0.348 0.320 0.297 0.283 0.271 0.262 0.254 0.246 0.248 0.249 0.253 0.253 ANG -16.3 -32.7 -48.4 -60.4 -72.1 -81.4 -90.3 -99.1 -106.5 -113.6 -121.6 -128.8 -134.6 -142.4 -149.0 -155.3 -160.8 -167.3 -172.0 -177.5 S21 MAG 15.67 14.42 12.92 11.41 10.09 8.94 8.00 7.23 6.54 6.00 5.51 5.14 4.80 4.47 4.23 3.99 3.79 3.59 3.44 3.29 ANG 165.4 152.1 140.6 131.2 123.5 117.2 112.3 108.2 104.2 100.9 98.2 95.4 93.1 90.8 89.0 87.0 85.3 83.7 81.9 80.5 S12 MAG 0.018 0.035 0.048 0.059 0.067 0.074 0.080 0.085 0.091 0.096 0.101 0.106 0.111 0.117 0.122 0.128 0.134 0.140 0.145 0.151 ANG 81.2 72.2 65.3 61.2 58.6 57.3 56.6 56.1 56.3 57.3 57.4 57.8 58.7 59.2 60.0 60.5 61.1 61.5 62.1 62.7 S22 MAG 0.962 0.889 0.791 0.698 0.618 0.549 0.492 0.445 0.404 0.373 0.344 0.321 0.298 0.283 0.263 0.252 0.238 0.226 0.215 0.204 ANG -10.7 -20.9 -28.9 -34.6 -38.2 -40.7 -42.1 -42.5 -42.7 -42.0 -41.6 -40.7 -39.1 -37.5 -36.3 -34.6 -33.0 -31.3 -29.6 -27.2 Rev.0, Jun. 2001, page 7 of 10 2SC5700 (VCE = 1 V, IC = 20 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.526 0.406 0.334 0.284 0.263 0.243 0.242 0.236 0.230 0.239 0.240 0.247 0.246 0.255 0.257 0.265 0.268 0.282 0.283 0.300 ANG -43.0 -76.6 -100.0 -116.6 -131.4 -143.4 -152.6 -159.6 -167.8 -173.4 -179.4 175.6 172.4 167.4 163.8 160.2 158.7 154.1 152.7 150.3 S21 MAG 37.91 27.98 20.76 16.30 13.33 11.24 9.74 8.57 7.62 6.91 6.31 5.82 5.38 5.02 4.71 4.45 4.19 3.97 3.80 3.63 ANG 148.3 127.5 115.3 108.1 103.0 99.2 96.3 93.6 91.4 89.4 87.7 85.9 84.4 82.9 81.3 80.1 78.9 77.6 76.4 75.4 S12 MAG 0.015 0.025 0.033 0.040 0.047 0.055 0.063 0.071 0.078 0.086 0.094 0.102 0.110 0.117 0.126 0.134 0.142 0.149 0.157 0.165 ANG 75.0 67.3 66.9 68.0 69.8 71.1 72.0 72.7 73.5 74.1 73.9 74.1 74.4 74.3 74.2 74.4 74.2 73.9 74.1 73.7 S22 MAG 0.817 0.605 0.453 0.360 0.300 0.257 0.226 0.203 0.184 0.170 0.160 0.150 0.143 0.138 0.133 0.130 0.128 0.125 0.123 0.123 ANG -25.2 -40.0 -45.9 -47.1 -46.2 -44.4 -41.4 -38.2 -34.3 -30.5 -26.8 -22.6 -18.1 -14.0 -9.6 -5.3 -1.2 2.5 7.1 11.8 Rev.0, Jun. 2001, page 8 of 10 2SC5700 Package Dimensions As of January, 2001 Unit: mm 0.2 1.4 0.05 1.2 0.05 0.8 0.1 0.2 0.45 0.9 0.1 0.45 0.6 MAX Hitachi Code JEDEC EIAJ Mass (reference value) (0.1) (0.1) 3-0.2 +0.1 -0.05 0.15 +0.1 -0.05 MFPAK 0.0016 g Rev.0, Jun. 2001, page 9 of 10 2SC5700 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.0, Jun. 2001, page 10 of 10 |
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